Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
CRYSTAL STRUCTURE COMPOUND OXIDE SINTERED BODY SPUTTERING TARGET CRYSTALLINE OXIDE THIN FILM AMORPHOUS OXIDE THIN FILM THIN FILM TRANSISTOR AND ELECTRONIC EQUIPMENT
하기 조성식 (2) 로 나타내고, 하기 (A) ∼ (K) 에 규정하는 X 선 (Cu-Kα 선) 회절 측정에 의해 관측되는 입사각 (2θ) 의 범위에서 회절 피크를 갖는 결정 구조 화합물 A. (InxGayAlz)2O3····(2) (식 (2) 중, 0.47 ≤ x ≤ 0.53, 0.17 ≤ y ≤ 0.43, 0.07 ≤ z ≤ 0.33, x ＋ y ＋ z = 1 이다.) 31°∼ 34°···(A), 36°∼ 39°···(B), 30°∼ 32°···(C), 51°∼ 53°···(D), 53°∼ 56°···(E), 62°∼ 66°···(F), 9°∼ 11°···(G), 19°∼ 21°···(H), 42°∼ 45°···(I), 8°∼ 10°···(J), 17°∼ 19°···(K)
A crystalline structure compound A is represented by a composition formula (2) and has having diffraction peaks respectively in below-defined ranges (A) to (K) of an incidence angle observed by X-ray diffraction measurement.(InxGayAlz)2O3 (2)In the formula (2), 0.47≤x≤0.53, 0.17≤y≤0.43, 0.07≤z≤0.33, and x+y+z=1.31° to 34° (A), 36° to 39° (B), 30° to 32° (C), 51° to 53° (D), 53° to 56° (E), 62° to 66° (F), 9° to 11° (G), 19° to 21° (H), 42° to 45° (I), 8° to 10° (J), and 17° to 19° (K).
CRYSTAL STRUCTURE COMPOUND OXIDE SINTERED BODY SPUTTERING TARGET CRYSTALLINE OXIDE THIN FILM AMORPHOUS OXIDE THIN FILM THIN FILM TRANSISTOR AND ELECTRONIC EQUIPMENT
하기 조성식 (2) 로 나타내고, 하기 (A) ∼ (K) 에 규정하는 X 선 (Cu-Kα 선) 회절 측정에 의해 관측되는 입사각 (2θ) 의 범위에서 회절 피크를 갖는 결정 구조 화합물 A. (InxGayAlz)2O3····(2) (식 (2) 중, 0.47 ≤ x ≤ 0.53, 0.17 ≤ y ≤ 0.43, 0.07 ≤ z ≤ 0.33, x ＋ y ＋ z = 1 이다.) 31°∼ 34°···(A), 36°∼ 39°···(B), 30°∼ 32°···(C), 51°∼ 53°···(D), 53°∼ 56°···(E), 62°∼ 66°···(F), 9°∼ 11°···(G), 19°∼ 21°···(H), 42°∼ 45°···(I), 8°∼ 10°···(J), 17°∼ 19°···(K)
A crystalline structure compound A is represented by a composition formula (2) and has having diffraction peaks respectively in below-defined ranges (A) to (K) of an incidence angle observed by X-ray diffraction measurement.(InxGayAlz)2O3 (2)In the formula (2), 0.47≤x≤0.53, 0.17≤y≤0.43, 0.07≤z≤0.33, and x+y+z=1.31° to 34° (A), 36° to 39° (B), 30° to 32° (C), 51° to 53° (D), 53° to 56° (E), 62° to 66° (F), 9° to 11° (G), 19° to 21° (H), 42° to 45° (I), 8° to 10° (J), and 17° to 19° (K).
CRYSTAL STRUCTURE COMPOUND OXIDE SINTERED BODY SPUTTERING TARGET CRYSTALLINE OXIDE THIN FILM AMORPHOUS OXIDE THIN FILM THIN FILM TRANSISTOR AND ELECTRONIC EQUIPMENT
결정 구조 화합물, 산화물 소결체, 스퍼터링 타깃, 결정질 산화물 박막, 아모르퍼스 산화물 박막, 박막 트랜지스터, 및 전자 기기
INOUE KAZUYOSHI (Autor:in) / SHIBATA MASATOSHI (Autor:in) / KAWASHIMA EMI (Autor:in) / SASAKI KENICHI (Autor:in) / YAO ATSUSHI (Autor:in)
08.07.2022
Patent
Elektronische Ressource
Koreanisch
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