Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR
To provide an oxide sintered body that can form an oxide semiconductor thin film having excellent properties when used for a thin film transistor, and can suppress cracking during film formation and generation of nodules.SOLUTION: An oxide sintered body contains Ga, Sn, In, and heavy rare earth elements, where Ga2+xIn6-xSn2O16(0≤x≤1) is the main component, provided that, the heavy rare earth elements denote at least one element selected from Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.SELECTED DRAWING: None
【課題】薄膜トランジスタに用いたときに優れた特性を有する酸化物半導体薄膜を形成でき、かつ成膜時の割れやノジュールの生成を抑制できる酸化物焼結体の提供。【解決手段】Ｇａ、Ｓｎ、Ｉｎ、および重希土類元素を含み、Ｇａ２＋ｘＩｎ６−ｘＳｎ２Ｏ１６（０≦ｘ≦１）を主成分とする酸化物焼結体。ただし、重希土類元素とは、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、ＹｂおよびＬｕから選ばれる１種以上の元素。【選択図】なし
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR
To provide an oxide sintered body that can form an oxide semiconductor thin film having excellent properties when used for a thin film transistor, and can suppress cracking during film formation and generation of nodules.SOLUTION: An oxide sintered body contains Ga, Sn, In, and heavy rare earth elements, where Ga2+xIn6-xSn2O16(0≤x≤1) is the main component, provided that, the heavy rare earth elements denote at least one element selected from Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.SELECTED DRAWING: None
【課題】薄膜トランジスタに用いたときに優れた特性を有する酸化物半導体薄膜を形成でき、かつ成膜時の割れやノジュールの生成を抑制できる酸化物焼結体の提供。【解決手段】Ｇａ、Ｓｎ、Ｉｎ、および重希土類元素を含み、Ｇａ２＋ｘＩｎ６−ｘＳｎ２Ｏ１６（０≦ｘ≦１）を主成分とする酸化物焼結体。ただし、重希土類元素とは、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、ＹｂおよびＬｕから選ばれる１種以上の元素。【選択図】なし
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR
酸化物焼結体、スパッタリングターゲット、酸化物半導体薄膜、および薄膜トランジスタ
INOUE KAZUYOSHI (Autor:in) / SHIBATA MASATOSHI (Autor:in)
25.04.2019
Patent
Elektronische Ressource
Japanisch
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