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SINTERED POLYCRYSTALLINE CUBIC BORON NITRIDE MATERIAL
다결정 입방정 질화 붕소(PCBN) 물질이 제공된다. 상기 물질은 30 내지 90 중량%의 입방정 질화 붕소(cBN), 및 cBN 입자가 분산되는 매트릭스 물질을 포함한다. 상기 매트릭스 물질은 알루미늄 화합물의 입자를 포함하며, 상기 매트릭스 물질 입자는 선형 인터셉트 기법을 사용하여 측정하였을 때 100 nm 이하의 d50을 갖는다.
A method of making a polycrystalline cubic boron nitride (PCBN), material is provided. The matrix precursor powder comprises an aluminium compound. The method comprises mixing matrix precursor powder comprising particles having an average particle size no greater than 250 nm, with between 30 and 40 volume percent of cubic boron nitride (cBN) particles having an average particle size of at least 4 μm, and then spark plasma sintering the mixed particles. The spark plasma sintering occurs at a pressure of at least 500 MPa, a temperature of no less than 1050° C. and no more than 1500° C. and a time of no less than 1 minute and no more than 3 minutes.
SINTERED POLYCRYSTALLINE CUBIC BORON NITRIDE MATERIAL
다결정 입방정 질화 붕소(PCBN) 물질이 제공된다. 상기 물질은 30 내지 90 중량%의 입방정 질화 붕소(cBN), 및 cBN 입자가 분산되는 매트릭스 물질을 포함한다. 상기 매트릭스 물질은 알루미늄 화합물의 입자를 포함하며, 상기 매트릭스 물질 입자는 선형 인터셉트 기법을 사용하여 측정하였을 때 100 nm 이하의 d50을 갖는다.
A method of making a polycrystalline cubic boron nitride (PCBN), material is provided. The matrix precursor powder comprises an aluminium compound. The method comprises mixing matrix precursor powder comprising particles having an average particle size no greater than 250 nm, with between 30 and 40 volume percent of cubic boron nitride (cBN) particles having an average particle size of at least 4 μm, and then spark plasma sintering the mixed particles. The spark plasma sintering occurs at a pressure of at least 500 MPa, a temperature of no less than 1050° C. and no more than 1500° C. and a time of no less than 1 minute and no more than 3 minutes.
SINTERED POLYCRYSTALLINE CUBIC BORON NITRIDE MATERIAL
소결된 다결정성 입방정 질화붕소 물질
25.10.2022
Patent
Elektronische Ressource
Koreanisch
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