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    Oriented alumina substrate for epitaxial growth

    Neue Suche nach: WATANABE MORIMICHI
    Neue Suche nach: SATO KEI
    Neue Suche nach: MATSUSHIMA KIYOSHI
    Neue Suche nach: NANATAKI TSUTOMU

    An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.

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    Oriented alumina substrate for epitaxial growth

    Neue Suche nach: WATANABE MORIMICHI
    Neue Suche nach: SATO KEI
    Neue Suche nach: MATSUSHIMA KIYOSHI
    Neue Suche nach: NANATAKI TSUTOMU

    An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.

    Zugriff

    Download

    Oriented alumina substrate for epitaxial growth

    Neue Suche nach: WATANABE MORIMICHI
    Neue Suche nach: SATO KEI
    Neue Suche nach: MATSUSHIMA KIYOSHI
    Neue Suche nach: NANATAKI TSUTOMU

    An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.

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    Titel:

    Oriented alumina substrate for epitaxial growth

    Beteiligte:

    WATANABE MORIMICHI (Autor:in) / SATO KEI (Autor:in) / MATSUSHIMA KIYOSHI (Autor:in) / NANATAKI TSUTOMU (Autor:in)

    Erscheinungsdatum:

    08.10.2019

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  C30B SINGLE-CRYSTAL GROWTH , Züchten von Einkristallen / C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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    Oriented alumina substrate for epitaxial growth

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