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    Oriented alumina substrate for epitaxial growth

    New search for: WATANABE MORIMICHI
    New search for: SATO KEI
    New search for: MATSUSHIMA KIYOSHI
    New search for: NANATAKI TSUTOMU

    An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.

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    Oriented alumina substrate for epitaxial growth

    New search for: WATANABE MORIMICHI
    New search for: SATO KEI
    New search for: MATSUSHIMA KIYOSHI
    New search for: NANATAKI TSUTOMU

    An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.

    Access

    Download

    Oriented alumina substrate for epitaxial growth

    New search for: WATANABE MORIMICHI
    New search for: SATO KEI
    New search for: MATSUSHIMA KIYOSHI
    New search for: NANATAKI TSUTOMU

    An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.

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    Document information
    Title:

    Oriented alumina substrate for epitaxial growth

    Contributors:

    WATANABE MORIMICHI (author) / SATO KEI (author) / MATSUSHIMA KIYOSHI (author) / NANATAKI TSUTOMU (author)

    Publication date:

    2019-10-08

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    English

    Classification:

    IPC:  C30B SINGLE-CRYSTAL GROWTH , Züchten von Einkristallen / C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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