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    Device including semiconductor substrate containing gallium nitride and method for producing the same

    Neue Suche nach: FUJIKANE MASAKI

    A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.

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    Device including semiconductor substrate containing gallium nitride and method for producing the same

    Neue Suche nach: FUJIKANE MASAKI

    A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.

    Zugriff

    Download

    Device including semiconductor substrate containing gallium nitride and method for producing the same

    Neue Suche nach: FUJIKANE MASAKI

    A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.

    Zugriff

    Download

    Zugriff

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    Dokumentinformationen
    Ähnliche Titel

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    Dokumentinformationen
    Titel:

    Device including semiconductor substrate containing gallium nitride and method for producing the same

    Beteiligte:

    FUJIKANE MASAKI (Autor:in)

    Erscheinungsdatum:

    07.01.2020

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  C30B SINGLE-CRYSTAL GROWTH , Züchten von Einkristallen / B01D SEPARATION , Trennen / E03B Anlagen oder Verfahren zum Gewinnen, Sammeln oder Verteilen von Wasser , INSTALLATIONS OR METHODS FOR OBTAINING, COLLECTING, OR DISTRIBUTING WATER / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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