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    METHOD FOR PRODUCING A DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE

    Neue Suche nach: FUJIKANE MASAKI

    A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.

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    METHOD FOR PRODUCING A DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE

    Neue Suche nach: FUJIKANE MASAKI

    A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.

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    METHOD FOR PRODUCING A DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE

    Neue Suche nach: FUJIKANE MASAKI

    A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.

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    Titel:

    METHOD FOR PRODUCING A DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE

    Weitere Titelangaben:

    VERFAHREN ZUR HERSTELLUNG EINER VORRICHTUNG MIT EINEM HALBLEITERSUBSTRAT MIT GALLIUMNITRID
    PROCÉDÉ DE PRODUCTION D'UN DISPOSITIF COMPRENANT UN SUBSTRAT SEMI-CONDUCTEUR CONTENANT DU NITRURE DE GALLIUM

    Beteiligte:

    FUJIKANE MASAKI (Autor:in)

    Erscheinungsdatum:

    06.03.2019

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  B01D SEPARATION , Trennen / C30B SINGLE-CRYSTAL GROWTH , Züchten von Einkristallen / E03B Anlagen oder Verfahren zum Gewinnen, Sammeln oder Verteilen von Wasser , INSTALLATIONS OR METHODS FOR OBTAINING, COLLECTING, OR DISTRIBUTING WATER / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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