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Doped bismuth silicate crystals via devitrification of glass forming liquids
This technology is directed to the preparation of doped-bismuth-silicate seed crystals through controlled crystallization (e.g. dimensionality of growth and nucleation mechanism) and the method of forming high purity single seed (particle size ranges from micrometers to millimeters) for various uses. These seed crystals have a nominal stoichiometry of Bi2-xAxSiO5, Bi2-xAxSi3O9, Bi4-xAxSi3O9, and Bi12-xAxSiO20, where A is a rare earth dopant selected from La, Ce, Nd, Pr, and/or Sm.
Doped bismuth silicate crystals via devitrification of glass forming liquids
This technology is directed to the preparation of doped-bismuth-silicate seed crystals through controlled crystallization (e.g. dimensionality of growth and nucleation mechanism) and the method of forming high purity single seed (particle size ranges from micrometers to millimeters) for various uses. These seed crystals have a nominal stoichiometry of Bi2-xAxSiO5, Bi2-xAxSi3O9, Bi4-xAxSi3O9, and Bi12-xAxSiO20, where A is a rare earth dopant selected from La, Ce, Nd, Pr, and/or Sm.
Doped bismuth silicate crystals via devitrification of glass forming liquids
GONG YUXUAN (Autor:in) / VELEZ MARIANO H (Autor:in)
16.08.2022
Patent
Elektronische Ressource
Englisch
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