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Aluminum nitride sintered body and member for semiconductor manufacuting apparatus comprising same
An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.
Aluminum nitride sintered body and member for semiconductor manufacuting apparatus comprising same
An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.
Aluminum nitride sintered body and member for semiconductor manufacuting apparatus comprising same
CHAE JE HO (Autor:in) / PARK HYO SUNG (Autor:in) / AHN DUCK WON (Autor:in) / KANG TAE HEE (Autor:in)
22.11.2022
Patent
Elektronische Ressource
Englisch
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