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    Member for semiconductor manufacturing apparatus including aluminum nitride sintered body

    Neue Suche nach: JUNG YOO HYUN

    An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide, 10 to 100 ppm of titanium (Ti) and excess aluminum nitride (AlN). Accordingly, the volume resistance value and thermal conductivity at high temperatures are improved, and the generation of impurities can be suppressed during a semiconductor manufacturing process.

    질화 알루미늄 소결체는, 1 내지 5 중량%의 산화 이트륨, 10 내지 100 ppm의 티타늄(Ti) 및 여분의 질화 알루미늄(AlN)을 포함한다. 이로써, 고온에서의 체적 저항값 및 열전도율이 개선되며, 반도체 제조 공정 중 불순물의 발생이 억제될 수 있다.

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    Member for semiconductor manufacturing apparatus including aluminum nitride sintered body

    Neue Suche nach: JUNG YOO HYUN

    An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide, 10 to 100 ppm of titanium (Ti) and excess aluminum nitride (AlN). Accordingly, the volume resistance value and thermal conductivity at high temperatures are improved, and the generation of impurities can be suppressed during a semiconductor manufacturing process.

    질화 알루미늄 소결체는, 1 내지 5 중량%의 산화 이트륨, 10 내지 100 ppm의 티타늄(Ti) 및 여분의 질화 알루미늄(AlN)을 포함한다. 이로써, 고온에서의 체적 저항값 및 열전도율이 개선되며, 반도체 제조 공정 중 불순물의 발생이 억제될 수 있다.

    Zugriff

    Download

    Member for semiconductor manufacturing apparatus including aluminum nitride sintered body

    Neue Suche nach: JUNG YOO HYUN

    An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide, 10 to 100 ppm of titanium (Ti) and excess aluminum nitride (AlN). Accordingly, the volume resistance value and thermal conductivity at high temperatures are improved, and the generation of impurities can be suppressed during a semiconductor manufacturing process.

    질화 알루미늄 소결체는, 1 내지 5 중량%의 산화 이트륨, 10 내지 100 ppm의 티타늄(Ti) 및 여분의 질화 알루미늄(AlN)을 포함한다. 이로써, 고온에서의 체적 저항값 및 열전도율이 개선되며, 반도체 제조 공정 중 불순물의 발생이 억제될 수 있다.

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    Titel:

    Member for semiconductor manufacturing apparatus including aluminum nitride sintered body

    Weitere Titelangaben:

    질화 알루미늄 소결체를 포함하는 반도체 제조 장치용 부재

    Beteiligte:

    JUNG YOO HYUN (Autor:in)

    Erscheinungsdatum:

    17.05.2022

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Koreanisch

    Klassifikation:

    IPC:  H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / C04B Kalk , LIME

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