Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device
The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.
Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device
The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.
Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device
MIYANAGA MIKI (Autor:in) / WATATANI KENICHI (Autor:in) / AWATA HIDEAKI (Autor:in)
28.03.2023
Patent
Elektronische Ressource
Englisch
IPC:
H01B
CABLES
,
Kabel
/
C01G
Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle
,
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
/
C04B
Kalk
,
LIME
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
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