Oxide Sintered Material, Method of Producing Oxide Sintered Material, Sputtering Target, and Method of Producing Semiconductor Device: Fid-Bau Portal

Oxide Sintered Material, Method of Producing Oxide Sintered Material, Sputtering Target, and Method of Producing Semiconductor Device

MIYANAGA MIKI / WATATANI KENICHI / AWATA HIDEAKI

Abstract

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

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Oxide Sintered Material, Method of Producing Oxide Sintered Material, Sputtering Target, and Method of Producing Semiconductor Device

MIYANAGA MIKI / WATATANI KENICHI / AWATA HIDEAKI

Abstract

Oxide Sintered Material, Method of Producing Oxide Sintered Material, Sputtering Target, and Method of Producing Semiconductor Device

MIYANAGA MIKI / WATATANI KENICHI / AWATA HIDEAKI

Abstract

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Titel:

Oxide Sintered Material, Method of Producing Oxide Sintered Material, Sputtering Target, and Method of Producing Semiconductor Device

Beteiligte:

MIYANAGA MIKI (Autor:in) / WATATANI KENICHI (Autor:in) / AWATA HIDEAKI (Autor:in)

Erscheinungsdatum:

23.07.2020

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

MIYANAGA MIKI / WATATANI KENICHI / AWATA HIDEAKI | Europäisches Patentamt | 2020

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Oxide Sintered Material, Method of Producing Oxide Sintered Material, Sputtering Target, and Method of Producing Semiconductor Device

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