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Plasma processing device member, plasma processing device comprising said plasma processing device member, and method for manufacturing plasma processing device member
A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 μm or less.
Plasma processing device member, plasma processing device comprising said plasma processing device member, and method for manufacturing plasma processing device member
A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 μm or less.
Plasma processing device member, plasma processing device comprising said plasma processing device member, and method for manufacturing plasma processing device member
ISHIKAWA KAZUHIRO (Autor:in) / HINO TAKASHI (Autor:in) / SAITO SHUICHI (Autor:in)
01.08.2023
Patent
Elektronische Ressource
Englisch
IPC:
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
B32B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
,
Schichtkörper, d.h. aus Ebenen oder gewölbten Schichten, z.B. mit zell- oder wabenförmiger Form, aufgebaute Erzeugnisse
/
C04B
Kalk
,
LIME
/
H01J
Elektrische Entladungsröhren oder Entladungslampen
,
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
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