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    Composite sintered body, semiconductor manufacturing apparatus member, and method of producing composite sintered body

    Neue Suche nach: ATSUJI KYOHEI
    Neue Suche nach: MIYANISHI KEITA
    Neue Suche nach: NAGAI ASUMI
    Neue Suche nach: YAMAGUCHI HIROFUMI

    A composite sintered body includes a base material that includes ceramic as a main component, and an electrode arranged inside the base material or on a surface of the base material. The electrode contains W and ZrO2.

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    Composite sintered body, semiconductor manufacturing apparatus member, and method of producing composite sintered body

    Neue Suche nach: ATSUJI KYOHEI
    Neue Suche nach: MIYANISHI KEITA
    Neue Suche nach: NAGAI ASUMI
    Neue Suche nach: YAMAGUCHI HIROFUMI

    A composite sintered body includes a base material that includes ceramic as a main component, and an electrode arranged inside the base material or on a surface of the base material. The electrode contains W and ZrO2.

    Zugriff

    Download

    Composite sintered body, semiconductor manufacturing apparatus member, and method of producing composite sintered body

    Neue Suche nach: ATSUJI KYOHEI
    Neue Suche nach: MIYANISHI KEITA
    Neue Suche nach: NAGAI ASUMI
    Neue Suche nach: YAMAGUCHI HIROFUMI

    A composite sintered body includes a base material that includes ceramic as a main component, and an electrode arranged inside the base material or on a surface of the base material. The electrode contains W and ZrO2.

    Zugriff

    Download

    Zugriff

    Download

    Seitennavigation

    Dokumentinformationen
    Ähnliche Titel

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    Titel:

    Composite sintered body, semiconductor manufacturing apparatus member, and method of producing composite sintered body

    Beteiligte:

    ATSUJI KYOHEI (Autor:in) / MIYANISHI KEITA (Autor:in) / NAGAI ASUMI (Autor:in) / YAMAGUCHI HIROFUMI (Autor:in)

    Erscheinungsdatum:

    12.03.2024

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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