Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
OXIDE SINTERED BODY, SPUTTERING TARGET, AND OXIDE SEMICONDUCTOR THIN FILM OBTAINED USING SPUTTERING TARGET
Provided are an oxide sintered compact whereby low carrier density and high carrier mobility are obtained when the oxide sintered compact is used to obtain an oxide semiconductor thin film by a sputtering method, and a sputtering target which uses the oxide sintered compact. This oxide sintered compact contains, as an oxide, one or more positive divalent elements selected from the group consisting of indium, gallium, nickel, cobalt, calcium, strontium, and lead. The gallium content is less than 0.08 to 0.20 in terms of Ga/(In+Ga) atomic ratio, and the positive dyad (M) content is 0.0001 to 0.05 in terms of M/(In+Ga+M) atomic ratio. In a crystalline oxide semiconductor thin film formed using the oxide sintered compact as a sputtering target, the carrier density is less than 1×1018 cm−3, and the carrier mobility is at least 10 cm2V−1sec−1.
OXIDE SINTERED BODY, SPUTTERING TARGET, AND OXIDE SEMICONDUCTOR THIN FILM OBTAINED USING SPUTTERING TARGET
Provided are an oxide sintered compact whereby low carrier density and high carrier mobility are obtained when the oxide sintered compact is used to obtain an oxide semiconductor thin film by a sputtering method, and a sputtering target which uses the oxide sintered compact. This oxide sintered compact contains, as an oxide, one or more positive divalent elements selected from the group consisting of indium, gallium, nickel, cobalt, calcium, strontium, and lead. The gallium content is less than 0.08 to 0.20 in terms of Ga/(In+Ga) atomic ratio, and the positive dyad (M) content is 0.0001 to 0.05 in terms of M/(In+Ga+M) atomic ratio. In a crystalline oxide semiconductor thin film formed using the oxide sintered compact as a sputtering target, the carrier density is less than 1×1018 cm−3, and the carrier mobility is at least 10 cm2V−1sec−1.
OXIDE SINTERED BODY, SPUTTERING TARGET, AND OXIDE SEMICONDUCTOR THIN FILM OBTAINED USING SPUTTERING TARGET
NAKAYAMA TOKUYUKI (Autor:in) / NISHIMURA EIICHIRO (Autor:in) / MATSUMURA FUMIHIKO (Autor:in) / IWARA MASASHI (Autor:in)
18.05.2017
Patent
Elektronische Ressource
Englisch
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