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PLASMA RESISTANT SEMICONDUCTOR PROCESSING CHAMBER COMPONENTS
Described herein are components of a semiconductor processing apparatus, where at least one surface of the component is resistant to a halogen-containing reactive plasma. The component includes a solid structure having a composition containing crystal grains of yttrium oxide, yttrium fluoride or yttrium oxyfluoride and at least one additional compound selected from an oxide, fluoride, or oxyfluoride of neodymium, cerium, samarium, erbium, aluminum, scandium, lanthanum, hafnium, niobium, zirconium, ytterbium, hafnium, and combinations thereof.
PLASMA RESISTANT SEMICONDUCTOR PROCESSING CHAMBER COMPONENTS
Described herein are components of a semiconductor processing apparatus, where at least one surface of the component is resistant to a halogen-containing reactive plasma. The component includes a solid structure having a composition containing crystal grains of yttrium oxide, yttrium fluoride or yttrium oxyfluoride and at least one additional compound selected from an oxide, fluoride, or oxyfluoride of neodymium, cerium, samarium, erbium, aluminum, scandium, lanthanum, hafnium, niobium, zirconium, ytterbium, hafnium, and combinations thereof.
PLASMA RESISTANT SEMICONDUCTOR PROCESSING CHAMBER COMPONENTS
SUN JENNIFER Y (Autor:in) / DUAN REN-GUAN (Autor:in) / COLLINS KENNETH S (Autor:in)
17.01.2019
Patent
Elektronische Ressource
Englisch
IPC:
H01J
Elektrische Entladungsröhren oder Entladungslampen
,
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
/
C03C
Chemische Zusammensetzungen für Gläser, Glasuren oder Emails
,
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS
/
C04B
Kalk
,
LIME
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
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