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OXIDE SINTERED BODY AND SPUTTERING TARGET

INOUE KAZUYOSHI / TOMAI SHIGEKAZU / SHIBATA MASATOSHI / TAKESHIMA MOTOHIRO

Abstract

An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.

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OXIDE SINTERED BODY AND SPUTTERING TARGET

INOUE KAZUYOSHI / TOMAI SHIGEKAZU / SHIBATA MASATOSHI / TAKESHIMA MOTOHIRO

Abstract

An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.

OXIDE SINTERED BODY AND SPUTTERING TARGET

INOUE KAZUYOSHI / TOMAI SHIGEKAZU / SHIBATA MASATOSHI / TAKESHIMA MOTOHIRO

Abstract

An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.

Zugriff

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Ähnliche Titel

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Dokumentinformationen

Titel:

OXIDE SINTERED BODY AND SPUTTERING TARGET

Beteiligte:

INOUE KAZUYOSHI (Autor:in) / TOMAI SHIGEKAZU (Autor:in) / SHIBATA MASATOSHI (Autor:in) / TAKESHIMA MOTOHIRO (Autor:in)

Erscheinungsdatum:

18.07.2019

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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