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DIRECT BONDED COPPER CERAMIC SUBSTRATE
A direct bonded copper ceramic substrate is provided, which includes a nitride ceramic substrate, a first passivation layer, and a first copper layer. The first passivation layer includes aluminum oxide or silicon oxide doped with another metal. The other metal is titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, or a combination thereof. The aluminum or silicon and the other metal have a weight ratio of 60:40 to 99.5:0.5. The first passivation layer is disposed between the top surface of the nitride ceramic substrate and the first copper layer.
DIRECT BONDED COPPER CERAMIC SUBSTRATE
A direct bonded copper ceramic substrate is provided, which includes a nitride ceramic substrate, a first passivation layer, and a first copper layer. The first passivation layer includes aluminum oxide or silicon oxide doped with another metal. The other metal is titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, or a combination thereof. The aluminum or silicon and the other metal have a weight ratio of 60:40 to 99.5:0.5. The first passivation layer is disposed between the top surface of the nitride ceramic substrate and the first copper layer.
DIRECT BONDED COPPER CERAMIC SUBSTRATE
CHUANG KAI-HSIANG (Autor:in) / HSU CHIEN-CHIANG (Autor:in) / HSU CHIEN-CHUNG (Autor:in) / CHIU KUO-CHUANG (Autor:in)
27.05.2021
Patent
Elektronische Ressource
Englisch
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