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DIRECT BONDED COPPER CERAMIC SUBSTRATE
A direct bonded copper ceramic substrate is provided, which includes a nitride ceramic substrate, a first passivation layer, and a first copper layer. The first passivation layer includes aluminum oxide or silicon oxide doped with another metal. The other metal is titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, or a combination thereof. The aluminum or silicon and the other metal have a weight ratio of 60:40 to 99.5:0.5. The first passivation layer is disposed between the top surface of the nitride ceramic substrate and the first copper layer.
DIRECT BONDED COPPER CERAMIC SUBSTRATE
A direct bonded copper ceramic substrate is provided, which includes a nitride ceramic substrate, a first passivation layer, and a first copper layer. The first passivation layer includes aluminum oxide or silicon oxide doped with another metal. The other metal is titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, or a combination thereof. The aluminum or silicon and the other metal have a weight ratio of 60:40 to 99.5:0.5. The first passivation layer is disposed between the top surface of the nitride ceramic substrate and the first copper layer.
DIRECT BONDED COPPER CERAMIC SUBSTRATE
CHUANG KAI-HSIANG (author) / HSU CHIEN-CHIANG (author) / HSU CHIEN-CHUNG (author) / CHIU KUO-CHUANG (author)
2021-05-27
Patent
Electronic Resource
English
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