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    TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING TUNNEL BARRIER LAYER

    Neue Suche nach: ICHIKAWA SHINTO
    Neue Suche nach: NAKADA KATSUYUKI

    A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.

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    TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING TUNNEL BARRIER LAYER

    Neue Suche nach: ICHIKAWA SHINTO
    Neue Suche nach: NAKADA KATSUYUKI

    A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.

    Zugriff

    Download

    TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING TUNNEL BARRIER LAYER

    Neue Suche nach: ICHIKAWA SHINTO
    Neue Suche nach: NAKADA KATSUYUKI

    A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.

    Zugriff

    Download

    Zugriff

    Download

    Seitennavigation

    Dokumentinformationen
    Ähnliche Titel

    Exportieren, teilen und zitieren

    Dokumentinformationen
    Titel:

    TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING TUNNEL BARRIER LAYER

    Beteiligte:

    ICHIKAWA SHINTO (Autor:in) / NAKADA KATSUYUKI (Autor:in)

    Erscheinungsdatum:

    18.05.2023

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  H10N

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