Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING TUNNEL BARRIER LAYER

    New search for: ICHIKAWA SHINTO
    New search for: NAKADA KATSUYUKI

    A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.

    Access

    Download

    Access

    Download

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING TUNNEL BARRIER LAYER

    New search for: ICHIKAWA SHINTO
    New search for: NAKADA KATSUYUKI

    A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.

    Access

    Download

    TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING TUNNEL BARRIER LAYER

    New search for: ICHIKAWA SHINTO
    New search for: NAKADA KATSUYUKI

    A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.

    Access

    Download

    Access

    Download

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING TUNNEL BARRIER LAYER

    Contributors:

    ICHIKAWA SHINTO (author) / NAKADA KATSUYUKI (author)

    Publication date:

    2023-05-18

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    English

    Classification:

    IPC:  H10N

    Similar titles

    Tunnel barrier layer, magnetoresistance effect element, and method for manufacturing tunnel barrier layer

    ICHIKAWA SHINTO / NAKADA KATSUYUKI | European Patent Office | 2024

    Free access

    Tunnel barrier layer, magnetoresistance effect element, method for manufacturing tunnel barrier layer, and insulating layer

    ICHIKAWA SHINTO / NAKADA KATSUYUKI | European Patent Office | 2023

    Free access

    TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, METHOD FOR MANUFACTURING TUNNEL BARRIER LAYER, AND INSULATING LAYER

    ICHIKAWA SHINTO / NAKADA KATSUYUKI | European Patent Office | 2020

    Free access

    TUNNEL MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, BUILT-IN MEMORY, AND METHOD FOR MANUFACTURING TUNNEL MAGNETORESISTANCE EFFECT ELEMENT

    SASAKI TOMOYUKI | European Patent Office | 2019

    Free access

    Sound barrier tunnel

    PAK HYE GYEONG | European Patent Office | 2025

    Free access
    Back to top