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SILICON CARBIDE DIRECT SILICON SURFACE POLISH
The present disclosure includes a method of forming a polished surface. Forming the polished surface can include grinding an initial ceramic substrate to form a ground ceramic substrate; infiltrating the ground ceramic substrate with silicon; and polishing the silicon-infiltrated ceramic substrate, thereby forming the polished surface.
SILICON CARBIDE DIRECT SILICON SURFACE POLISH
The present disclosure includes a method of forming a polished surface. Forming the polished surface can include grinding an initial ceramic substrate to form a ground ceramic substrate; infiltrating the ground ceramic substrate with silicon; and polishing the silicon-infiltrated ceramic substrate, thereby forming the polished surface.
SILICON CARBIDE DIRECT SILICON SURFACE POLISH
FULLINGIM SHANDON T (Autor:in) / VARGAS HUGO (Autor:in)
08.08.2024
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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