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VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AND SILICON CARBIDE CRYSTALS AND METHODS FOR PRODUCING SAME
An optical device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype, for transmitting light having a wavelength in a range of from 420 nm to 4.5 μm. The device may include a window, lens, prism, or waveguide. A system includes a source for generating light having a wavelength in a range of from 420 nm to 4.5 μm, and a device for receiving and transmitting the light, where the device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype. The disclosure also relates to crystals and methods for optical applications, including an aluminum doped SiC crystal having residual nitrogen and boron impurities, where the aluminum concentration is greater than the combined concentrations of nitrogen and boron, and where an optical absorption coefficient is less than about 0.4 cm−1 at a wavelength between about 400 nm to about 800 nm.
VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AND SILICON CARBIDE CRYSTALS AND METHODS FOR PRODUCING SAME
An optical device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype, for transmitting light having a wavelength in a range of from 420 nm to 4.5 μm. The device may include a window, lens, prism, or waveguide. A system includes a source for generating light having a wavelength in a range of from 420 nm to 4.5 μm, and a device for receiving and transmitting the light, where the device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype. The disclosure also relates to crystals and methods for optical applications, including an aluminum doped SiC crystal having residual nitrogen and boron impurities, where the aluminum concentration is greater than the combined concentrations of nitrogen and boron, and where an optical absorption coefficient is less than about 0.4 cm−1 at a wavelength between about 400 nm to about 800 nm.
VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AND SILICON CARBIDE CRYSTALS AND METHODS FOR PRODUCING SAME
ZWIEBACK ILYA (Autor:in) / RENGARAJAN VARATHARAJAN (Autor:in) / SOUZIS ANDREW E (Autor:in) / RULAND GARY (Autor:in)
24.10.2024
Patent
Elektronische Ressource
Englisch
IPC:
C30B
SINGLE-CRYSTAL GROWTH
,
Züchten von Einkristallen
/
C01B
NON-METALLIC ELEMENTS
,
Nichtmetallische Elemente
/
C04B
Kalk
,
LIME
/
G02F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING,...
,
Vorrichtungen oder Anordnungen, deren optische Arbeitsweise durch Änderung der optischen Eigenschaften des Mediums der Vorrichtungen oder Anordnungen geändert wird zum Steuern der Intensität, Farbe, Phase, Polarisation oder der Richtung von...
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
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