Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SILICON CARBIDE CRYSTALS AND METHODS FOR PRODUCING SAME
The present disclosure generally relates to silicon carbide crystals which may be used in optical applications, and to methods for producing the same. In one form, a composition includes an aluminum doped silicon carbide crystal having residual nitrogen and boron impurities. The concentration of aluminum in the silicon carbide crystal is greater than the combined concentrations of nitrogen and boron in the silicon carbide crystal, and the silicon carbide crystal includes an optical absorption coefficient of less than about 0.4 cm−1 at a wavelength in a range between about 400 nm to about 800 nm.
SILICON CARBIDE CRYSTALS AND METHODS FOR PRODUCING SAME
The present disclosure generally relates to silicon carbide crystals which may be used in optical applications, and to methods for producing the same. In one form, a composition includes an aluminum doped silicon carbide crystal having residual nitrogen and boron impurities. The concentration of aluminum in the silicon carbide crystal is greater than the combined concentrations of nitrogen and boron in the silicon carbide crystal, and the silicon carbide crystal includes an optical absorption coefficient of less than about 0.4 cm−1 at a wavelength in a range between about 400 nm to about 800 nm.
SILICON CARBIDE CRYSTALS AND METHODS FOR PRODUCING SAME
ZWIEBACK ILYA (Autor:in) / RENGARAJAN VARATHARAJAN (Autor:in) / SOUZIS ANDREW N (Autor:in) / RULAND GARY E (Autor:in)
02.09.2021
Patent
Elektronische Ressource
Englisch
| Europäisches Patentamt | 2024
| Europäisches Patentamt | 2024
| Europäisches Patentamt | 2021