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    Power module substrate with heat sink, and method for producing power module substrate with heat sink

    Neue Suche nach: NAGATOMO YOSHIYUKI
    Neue Suche nach: ISHIZUKA HIROYA
    Neue Suche nach: NAGASE TOSHIYUKI
    Neue Suche nach: KUROMITSU YOSHIROU
    Neue Suche nach: EDO MASAKAZU
    Neue Suche nach: MIYAKE HIDEYUKI

    This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer (50) having a Mg-containing compound (52) (excluding MgO) which contains Mg dispersed in an Al—Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer (50) is within a range from 5 μm to 80 μm.

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    Power module substrate with heat sink, and method for producing power module substrate with heat sink

    Neue Suche nach: NAGATOMO YOSHIYUKI
    Neue Suche nach: ISHIZUKA HIROYA
    Neue Suche nach: NAGASE TOSHIYUKI
    Neue Suche nach: KUROMITSU YOSHIROU
    Neue Suche nach: EDO MASAKAZU
    Neue Suche nach: MIYAKE HIDEYUKI

    This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer (50) having a Mg-containing compound (52) (excluding MgO) which contains Mg dispersed in an Al—Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer (50) is within a range from 5 μm to 80 μm.

    Zugriff

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    Power module substrate with heat sink, and method for producing power module substrate with heat sink

    Neue Suche nach: NAGATOMO YOSHIYUKI
    Neue Suche nach: ISHIZUKA HIROYA
    Neue Suche nach: NAGASE TOSHIYUKI
    Neue Suche nach: KUROMITSU YOSHIROU
    Neue Suche nach: EDO MASAKAZU
    Neue Suche nach: MIYAKE HIDEYUKI

    This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer (50) having a Mg-containing compound (52) (excluding MgO) which contains Mg dispersed in an Al—Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer (50) is within a range from 5 μm to 80 μm.

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    Titel:

    Power module substrate with heat sink, and method for producing power module substrate with heat sink

    Beteiligte:

    NAGATOMO YOSHIYUKI (Autor:in) / ISHIZUKA HIROYA (Autor:in) / NAGASE TOSHIYUKI (Autor:in) / KUROMITSU YOSHIROU (Autor:in) / EDO MASAKAZU (Autor:in) / MIYAKE HIDEYUKI (Autor:in)

    Erscheinungsdatum:

    12.01.2016

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H05K PRINTED CIRCUITS , Gedruckte Schaltungen

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