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    Complex oxide sintered body, sputtering target, transparent conductive oxide film, and method for producing same

    Neue Suche nach: KURAMOCHI HIDETO
    Neue Suche nach: TAMANO KIMIAKI
    Neue Suche nach: IIGUSA HITOSHI
    Neue Suche nach: AKIIKE RYO
    Neue Suche nach: SHIBUTAMI TETSUO

    The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.

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    Complex oxide sintered body, sputtering target, transparent conductive oxide film, and method for producing same

    Neue Suche nach: KURAMOCHI HIDETO
    Neue Suche nach: TAMANO KIMIAKI
    Neue Suche nach: IIGUSA HITOSHI
    Neue Suche nach: AKIIKE RYO
    Neue Suche nach: SHIBUTAMI TETSUO

    The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.

    Zugriff

    Download

    Complex oxide sintered body, sputtering target, transparent conductive oxide film, and method for producing same

    Neue Suche nach: KURAMOCHI HIDETO
    Neue Suche nach: TAMANO KIMIAKI
    Neue Suche nach: IIGUSA HITOSHI
    Neue Suche nach: AKIIKE RYO
    Neue Suche nach: SHIBUTAMI TETSUO

    The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.

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    Zugriff

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    Titel:

    Complex oxide sintered body, sputtering target, transparent conductive oxide film, and method for producing same

    Beteiligte:

    KURAMOCHI HIDETO (Autor:in) / TAMANO KIMIAKI (Autor:in) / IIGUSA HITOSHI (Autor:in) / AKIIKE RYO (Autor:in) / SHIBUTAMI TETSUO (Autor:in)

    Erscheinungsdatum:

    16.08.2016

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  H01B CABLES , Kabel / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H01J Elektrische Entladungsröhren oder Entladungslampen , ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

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