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Zinc oxide sputtering target
Provided is a zinc oxide-based sputtering target capable of improving the film formation rate while suppressing arcing in the formation of a zinc oxide-based transparent conductive film by sputtering. This zinc oxide-based sputtering target includes a zinc oxide-based sintered body mainly including zinc oxide crystal grains, and has a degree of (002) orientation of 50% or greater at a sputtering surface and a density of 5.30 g/cm3 or greater.
Zinc oxide sputtering target
Provided is a zinc oxide-based sputtering target capable of improving the film formation rate while suppressing arcing in the formation of a zinc oxide-based transparent conductive film by sputtering. This zinc oxide-based sputtering target includes a zinc oxide-based sintered body mainly including zinc oxide crystal grains, and has a degree of (002) orientation of 50% or greater at a sputtering surface and a density of 5.30 g/cm3 or greater.
Zinc oxide sputtering target
YOSHIKAWA JUN (Autor:in) / IMAI KATSUHIRO (Autor:in) / KONDO KOICHI (Autor:in) / KANNO KOKI (Autor:in)
20.03.2018
Patent
Elektronische Ressource
Englisch
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