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    Zinc oxide sintered compact, sputtering target, and zinc oxide thin film

    Neue Suche nach: MESUDA MASAMI
    Neue Suche nach: KURAMOCHI HIDETO
    Neue Suche nach: IIGUSA HITOSHI
    Neue Suche nach: OMI KENJI
    Neue Suche nach: SHIBUTAMI TETSUO

    There is provided a zinc oxide sintered compact with a zirconium content of 10 to 1000 ppm, and a sputtering target containing the zinc oxide sintered compact. There is also provided a zinc oxide thin-film having a zirconium content of 10 to 2000 ppm and a resistivity of 10 Ω·cm or greater.

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    Zinc oxide sintered compact, sputtering target, and zinc oxide thin film

    Neue Suche nach: MESUDA MASAMI
    Neue Suche nach: KURAMOCHI HIDETO
    Neue Suche nach: IIGUSA HITOSHI
    Neue Suche nach: OMI KENJI
    Neue Suche nach: SHIBUTAMI TETSUO

    There is provided a zinc oxide sintered compact with a zirconium content of 10 to 1000 ppm, and a sputtering target containing the zinc oxide sintered compact. There is also provided a zinc oxide thin-film having a zirconium content of 10 to 2000 ppm and a resistivity of 10 Ω·cm or greater.

    Zugriff

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    Zinc oxide sintered compact, sputtering target, and zinc oxide thin film

    Neue Suche nach: MESUDA MASAMI
    Neue Suche nach: KURAMOCHI HIDETO
    Neue Suche nach: IIGUSA HITOSHI
    Neue Suche nach: OMI KENJI
    Neue Suche nach: SHIBUTAMI TETSUO

    There is provided a zinc oxide sintered compact with a zirconium content of 10 to 1000 ppm, and a sputtering target containing the zinc oxide sintered compact. There is also provided a zinc oxide thin-film having a zirconium content of 10 to 2000 ppm and a resistivity of 10 Ω·cm or greater.

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    Titel:

    Zinc oxide sintered compact, sputtering target, and zinc oxide thin film

    Beteiligte:

    MESUDA MASAMI (Autor:in) / KURAMOCHI HIDETO (Autor:in) / IIGUSA HITOSHI (Autor:in) / OMI KENJI (Autor:in) / SHIBUTAMI TETSUO (Autor:in)

    Erscheinungsdatum:

    19.07.2016

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  H01B CABLES , Kabel / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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