Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SiC formed body and method for producing SiC formed body
A CVD-SiC formed body has low light transmittance and high resistivity, and may suitably be used as a member for an etcher that is used for a semiconductor production process, for example. The SiC formed body is formed using a CVD method, and includes 1 to 30 mass ppm of boron atoms, and more than 100 mass ppm and 1000 mass ppm or less of nitrogen atoms. The SiC formed body preferably has a resistivity of more than 10 Ω·cm and 100,000 Ω·cm or less, and a light transmittance at a wavelength of 950 nm of 0 to 1%.
SiC formed body and method for producing SiC formed body
A CVD-SiC formed body has low light transmittance and high resistivity, and may suitably be used as a member for an etcher that is used for a semiconductor production process, for example. The SiC formed body is formed using a CVD method, and includes 1 to 30 mass ppm of boron atoms, and more than 100 mass ppm and 1000 mass ppm or less of nitrogen atoms. The SiC formed body preferably has a resistivity of more than 10 Ω·cm and 100,000 Ω·cm or less, and a light transmittance at a wavelength of 950 nm of 0 to 1%.
SiC formed body and method for producing SiC formed body
SUGIHARA TAKAOMI (Autor:in) / ASAKURA MASAAKI (Autor:in) / TOKUNAGA TAKESHI (Autor:in) / SADAKI TETSUYA (Autor:in)
22.05.2018
Patent
Elektronische Ressource
Englisch
FORMED BODY, FORMED BODY WITH GLAZE LAYER, AND METHOD FOR MANUFACTURING FORMED BODY
| Europäisches Patentamt | 2023
| Europäisches Patentamt | 2020