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SiC formed body and method for producing SiC formed body
A CVD-SiC formed body has low light transmittance and high resistivity, and may suitably be used as a member for an etcher that is used for a semiconductor production process, for example. The SiC formed body is formed using a CVD method, and includes 1 to 30 mass ppm of boron atoms, and more than 100 mass ppm and 1000 mass ppm or less of nitrogen atoms. The SiC formed body preferably has a resistivity of more than 10 Ω·cm and 100,000 Ω·cm or less, and a light transmittance at a wavelength of 950 nm of 0 to 1%.
SiC formed body and method for producing SiC formed body
A CVD-SiC formed body has low light transmittance and high resistivity, and may suitably be used as a member for an etcher that is used for a semiconductor production process, for example. The SiC formed body is formed using a CVD method, and includes 1 to 30 mass ppm of boron atoms, and more than 100 mass ppm and 1000 mass ppm or less of nitrogen atoms. The SiC formed body preferably has a resistivity of more than 10 Ω·cm and 100,000 Ω·cm or less, and a light transmittance at a wavelength of 950 nm of 0 to 1%.
SiC formed body and method for producing SiC formed body
SUGIHARA TAKAOMI (author) / ASAKURA MASAAKI (author) / TOKUNAGA TAKESHI (author) / SADAKI TETSUYA (author)
2018-05-22
Patent
Electronic Resource
English
FORMED BODY, FORMED BODY WITH GLAZE LAYER, AND METHOD FOR MANUFACTURING FORMED BODY
European Patent Office | 2023
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