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Random network transistors of carbon nanotubes directly grown on glass substrate
We report a transistor of randomly networked single-walled carbon nanotubes (SWNTs) grown on glass by using water plasma CVD. The density of the nanotube on pre-patterned region was more than 50/μm2 which is much larger than the percolation threshold. The nanotube network transistors were fabricated with Al2O3 for the gate oxide and a conducting and transparent ZnO for the back-gate. These nanotube active devices may be fitted to thin film transistor applications for future opto-electronics.
Random network transistors of carbon nanotubes directly grown on glass substrate
We report a transistor of randomly networked single-walled carbon nanotubes (SWNTs) grown on glass by using water plasma CVD. The density of the nanotube on pre-patterned region was more than 50/μm2 which is much larger than the percolation threshold. The nanotube network transistors were fabricated with Al2O3 for the gate oxide and a conducting and transparent ZnO for the back-gate. These nanotube active devices may be fitted to thin film transistor applications for future opto-electronics.
Random network transistors of carbon nanotubes directly grown on glass substrate
Eun Ju Bae, (Autor:in) / Yo-Sep Min, (Autor:in) / Un Jeong Kim, (Autor:in) / Wanjun Park, (Autor:in)
01.10.2006
522521 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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