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Random network transistors of carbon nanotubes directly grown on glass substrate
We report a transistor of randomly networked single-walled carbon nanotubes (SWNTs) grown on glass by using water plasma CVD. The density of the nanotube on pre-patterned region was more than 50/μm2 which is much larger than the percolation threshold. The nanotube network transistors were fabricated with Al2O3 for the gate oxide and a conducting and transparent ZnO for the back-gate. These nanotube active devices may be fitted to thin film transistor applications for future opto-electronics.
Random network transistors of carbon nanotubes directly grown on glass substrate
We report a transistor of randomly networked single-walled carbon nanotubes (SWNTs) grown on glass by using water plasma CVD. The density of the nanotube on pre-patterned region was more than 50/μm2 which is much larger than the percolation threshold. The nanotube network transistors were fabricated with Al2O3 for the gate oxide and a conducting and transparent ZnO for the back-gate. These nanotube active devices may be fitted to thin film transistor applications for future opto-electronics.
Random network transistors of carbon nanotubes directly grown on glass substrate
Eun Ju Bae, (author) / Yo-Sep Min, (author) / Un Jeong Kim, (author) / Wanjun Park, (author)
2006-10-01
522521 byte
Conference paper
Electronic Resource
English
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