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NEGF-based transport phenomena for semiconduncting CNTFET
A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is realized by the carrier transport in the conduction and valence band. This phenomenon of CNT introduces a excellent quality of semiconducting material. The output current voltage characteristic is analyzed and simulated in this paper. From the simulated results, the behavior of the ON states current of semiconducting CNT is realized in 69.5μA.
NEGF-based transport phenomena for semiconduncting CNTFET
A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is realized by the carrier transport in the conduction and valence band. This phenomenon of CNT introduces a excellent quality of semiconducting material. The output current voltage characteristic is analyzed and simulated in this paper. From the simulated results, the behavior of the ON states current of semiconducting CNT is realized in 69.5μA.
NEGF-based transport phenomena for semiconduncting CNTFET
Farhana, Soheli (Autor:in) / Alam, A H M Zahirul (Autor:in) / Khan, Sheroz (Autor:in) / Motakabber, S M A (Autor:in)
01.02.2015
333354 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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