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Characterization of Pd-nanocrystal-based nonvolatile memory devices

Kwang Soo Seol, / Seong Jae Choi, / Jae-Young Choi, / Eun-Joo Jang, / Byung-Ki Kim, / Sang-Jin Park, / Dea-Gil Cha, / Shinae Jun, / Jong-Bong Park, / Yoondong Park, / ... [mehr]

Charge loss rate of Pd-nanocrystal (NC)-based nonvolatile memories is reduced about 60% by employing an asymmetric tunnel barrier composed of stacked SiO2 and HfO2 layers or insulating ZrO2 NCs between Pd NCs.

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Characterization of Pd-nanocrystal-based nonvolatile memory devices

Kwang Soo Seol, / Seong Jae Choi, / Jae-Young Choi, / Eun-Joo Jang, / Byung-Ki Kim, / Sang-Jin Park, / Dea-Gil Cha, / Shinae Jun, / Jong-Bong Park, / Yoondong Park, / ... [mehr]

Charge loss rate of Pd-nanocrystal (NC)-based nonvolatile memories is reduced about 60% by employing an asymmetric tunnel barrier composed of stacked SiO2 and HfO2 layers or insulating ZrO2 NCs between Pd NCs.

Characterization of Pd-nanocrystal-based nonvolatile memory devices

Kwang Soo Seol, / Seong Jae Choi, / Jae-Young Choi, / Eun-Joo Jang, / Byung-Ki Kim, / Sang-Jin Park, / Dea-Gil Cha, / Shinae Jun, / Jong-Bong Park, / Yoondong Park, / ... [mehr]

Charge loss rate of Pd-nanocrystal (NC)-based nonvolatile memories is reduced about 60% by employing an asymmetric tunnel barrier composed of stacked SiO2 and HfO2 layers or insulating ZrO2 NCs between Pd NCs.

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Titel:

Characterization of Pd-nanocrystal-based nonvolatile memory devices

Beteiligte:

Kwang Soo Seol, (Autor:in) / Seong Jae Choi, (Autor:in) / Jae-Young Choi, (Autor:in) / Eun-Joo Jang, (Autor:in) / Byung-Ki Kim, (Autor:in) / Sang-Jin Park, (Autor:in) / Dea-Gil Cha, (Autor:in) / Shinae Jun, (Autor:in) / Jong-Bong Park, (Autor:in) / Yoondong Park, (Autor:in)

Erschienen in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 704-705

Erscheinungsdatum:

01.10.2006

Format / Umfang:

414732 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388970

Medientyp:

Aufsatz (Konferenz)

Format:

Elektronische Ressource

Sprache:

Englisch

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