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    Characterization of Pd-nanocrystal-based nonvolatile memory devices

    New search for: Kwang Soo Seol,
    New search for: Seong Jae Choi,
    New search for: Jae-Young Choi,
    New search for: Eun-Joo Jang,
    New search for: Byung-Ki Kim,
    New search for: Sang-Jin Park,
    New search for: Dea-Gil Cha,
    New search for: Shinae Jun,
    New search for: Jong-Bong Park,
    New search for: Yoondong Park,
    New search for: Suk-Ho Choi,

    Charge loss rate of Pd-nanocrystal (NC)-based nonvolatile memories is reduced about 60% by employing an asymmetric tunnel barrier composed of stacked SiO2 and HfO2 layers or insulating ZrO2 NCs between Pd NCs.

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    Characterization of Pd-nanocrystal-based nonvolatile memory devices

    New search for: Kwang Soo Seol,
    New search for: Seong Jae Choi,
    New search for: Jae-Young Choi,
    New search for: Eun-Joo Jang,
    New search for: Byung-Ki Kim,
    New search for: Sang-Jin Park,
    New search for: Dea-Gil Cha,
    New search for: Shinae Jun,
    New search for: Jong-Bong Park,
    New search for: Yoondong Park,
    New search for: Suk-Ho Choi,

    Charge loss rate of Pd-nanocrystal (NC)-based nonvolatile memories is reduced about 60% by employing an asymmetric tunnel barrier composed of stacked SiO2 and HfO2 layers or insulating ZrO2 NCs between Pd NCs.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Characterization of Pd-nanocrystal-based nonvolatile memory devices

    New search for: Kwang Soo Seol,
    New search for: Seong Jae Choi,
    New search for: Jae-Young Choi,
    New search for: Eun-Joo Jang,
    New search for: Byung-Ki Kim,
    New search for: Sang-Jin Park,
    New search for: Dea-Gil Cha,
    New search for: Shinae Jun,
    New search for: Jong-Bong Park,
    New search for: Yoondong Park,
    New search for: Suk-Ho Choi,

    Charge loss rate of Pd-nanocrystal (NC)-based nonvolatile memories is reduced about 60% by employing an asymmetric tunnel barrier composed of stacked SiO2 and HfO2 layers or insulating ZrO2 NCs between Pd NCs.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Characterization of Pd-nanocrystal-based nonvolatile memory devices

    Contributors:

    Kwang Soo Seol, (author) / Seong Jae Choi, (author) / Jae-Young Choi, (author) / Eun-Joo Jang, (author) / Byung-Ki Kim, (author) / Sang-Jin Park, (author) / Dea-Gil Cha, (author) / Shinae Jun, (author) / Jong-Bong Park, (author) / Yoondong Park, (author)

    Published in:

    2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 704-705

    Publication date:

    2006-10-01

    Size:

    414732 byte

    ISBN:

    978-1-4244-0541-1 , 978-1-4244-0540-4

    DOI:

    https://doi.org/10.1109/NMDC.2006.4388970

    Type of media:

    Conference paper

    Type of material:

    Electronic Resource

    Language:

    English

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