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The nanophotonic crystals of anodic alumina deposited on InGaN/GaN quantum well structures
Two-dimensional photonic crystals were fabricated by a two-step anodization of the deposited Al layer on p-GaN surface of InGaN/GaN multi-quantum-well light-emitting-diode structures. Alumina hole arrays with nanometer-scale dimensions enhance the photoluminescence intensity up to three times. The GaN photonic crystals formed by dry etching process also provide the enhancement of light extraction.
The nanophotonic crystals of anodic alumina deposited on InGaN/GaN quantum well structures
Two-dimensional photonic crystals were fabricated by a two-step anodization of the deposited Al layer on p-GaN surface of InGaN/GaN multi-quantum-well light-emitting-diode structures. Alumina hole arrays with nanometer-scale dimensions enhance the photoluminescence intensity up to three times. The GaN photonic crystals formed by dry etching process also provide the enhancement of light extraction.
The nanophotonic crystals of anodic alumina deposited on InGaN/GaN quantum well structures
Jae Ho Choi, (Autor:in) / Keunjoo Kim, (Autor:in) / Mi Jung, (Autor:in) / Deok Ha Woo, (Autor:in)
01.10.2006
530975 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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