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    The nanophotonic crystals of anodic alumina deposited on InGaN/GaN quantum well structures

    New search for: Jae Ho Choi,
    New search for: Keunjoo Kim,
    New search for: Mi Jung,
    New search for: Deok Ha Woo,

    Two-dimensional photonic crystals were fabricated by a two-step anodization of the deposited Al layer on p-GaN surface of InGaN/GaN multi-quantum-well light-emitting-diode structures. Alumina hole arrays with nanometer-scale dimensions enhance the photoluminescence intensity up to three times. The GaN photonic crystals formed by dry etching process also provide the enhancement of light extraction.

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    The nanophotonic crystals of anodic alumina deposited on InGaN/GaN quantum well structures

    New search for: Jae Ho Choi,
    New search for: Keunjoo Kim,
    New search for: Mi Jung,
    New search for: Deok Ha Woo,

    Two-dimensional photonic crystals were fabricated by a two-step anodization of the deposited Al layer on p-GaN surface of InGaN/GaN multi-quantum-well light-emitting-diode structures. Alumina hole arrays with nanometer-scale dimensions enhance the photoluminescence intensity up to three times. The GaN photonic crystals formed by dry etching process also provide the enhancement of light extraction.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    The nanophotonic crystals of anodic alumina deposited on InGaN/GaN quantum well structures

    New search for: Jae Ho Choi,
    New search for: Keunjoo Kim,
    New search for: Mi Jung,
    New search for: Deok Ha Woo,

    Two-dimensional photonic crystals were fabricated by a two-step anodization of the deposited Al layer on p-GaN surface of InGaN/GaN multi-quantum-well light-emitting-diode structures. Alumina hole arrays with nanometer-scale dimensions enhance the photoluminescence intensity up to three times. The GaN photonic crystals formed by dry etching process also provide the enhancement of light extraction.

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    Title:

    The nanophotonic crystals of anodic alumina deposited on InGaN/GaN quantum well structures

    Contributors:

    Jae Ho Choi, (author) / Keunjoo Kim, (author) / Mi Jung, (author) / Deok Ha Woo, (author)

    Published in:

    2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 328-329

    Publication date:

    2006-10-01

    Size:

    530975 byte

    ISBN:

    978-1-4244-0541-1 , 978-1-4244-0540-4

    DOI:

    https://doi.org/10.1109/NMDC.2006.4388751

    Type of media:

    Conference paper

    Type of material:

    Electronic Resource

    Language:

    English

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