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Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material

hye-ryoung Lee, / Samjong Choi, / Kyoungah Cho, / Sangsig kim,

Ge nanocrystals (NCs)-embedded MOS capacitors are chareacterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2-and NH3-annealed HfO2 films are analyzed.

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Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material

hye-ryoung Lee, / Samjong Choi, / Kyoungah Cho, / Sangsig kim,

Ge nanocrystals (NCs)-embedded MOS capacitors are chareacterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2-and NH3-annealed HfO2 films are analyzed.

Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material

hye-ryoung Lee, / Samjong Choi, / Kyoungah Cho, / Sangsig kim,

Ge nanocrystals (NCs)-embedded MOS capacitors are chareacterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2-and NH3-annealed HfO2 films are analyzed.

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Titel:

Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material

Beteiligte:

hye-ryoung Lee, (Autor:in) / Samjong Choi, (Autor:in) / Kyoungah Cho, (Autor:in) / Sangsig kim, (Autor:in)

Erschienen in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 432-433

Erscheinungsdatum:

01.10.2006

Format / Umfang:

427301 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388802

Medientyp:

Aufsatz (Konferenz)

Format:

Elektronische Ressource

Sprache:

Englisch

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