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    Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material

    New search for: hye-ryoung Lee,
    New search for: Samjong Choi,
    New search for: Kyoungah Cho,
    New search for: Sangsig kim,

    Ge nanocrystals (NCs)-embedded MOS capacitors are chareacterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2-and NH3-annealed HfO2 films are analyzed.

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    Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material

    New search for: hye-ryoung Lee,
    New search for: Samjong Choi,
    New search for: Kyoungah Cho,
    New search for: Sangsig kim,

    Ge nanocrystals (NCs)-embedded MOS capacitors are chareacterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2-and NH3-annealed HfO2 films are analyzed.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material

    New search for: hye-ryoung Lee,
    New search for: Samjong Choi,
    New search for: Kyoungah Cho,
    New search for: Sangsig kim,

    Ge nanocrystals (NCs)-embedded MOS capacitors are chareacterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2-and NH3-annealed HfO2 films are analyzed.

    Access

    Check access
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    Order at Subito €

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    Title:

    Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material

    Contributors:

    hye-ryoung Lee, (author) / Samjong Choi, (author) / Kyoungah Cho, (author) / Sangsig kim, (author)

    Published in:

    2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 432-433

    Publication date:

    2006-10-01

    Size:

    427301 byte

    ISBN:

    978-1-4244-0541-1 , 978-1-4244-0540-4

    DOI:

    https://doi.org/10.1109/NMDC.2006.4388802

    Type of media:

    Conference paper

    Type of material:

    Electronic Resource

    Language:

    English

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