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Improved performance of multi-giga bit NAND flash using <100> channel orientation
In this paper, we report the enhanced performance of multi-giga bit NAND Flash memory through the combined effects of uniaxial compressive stress and -oriented channel engineering. Using this method, cell current increased more than 29% owing to the mobility enhancement of the narrow width (60nm) Flash cell. Reduced interface trap with the active edge of <100> channel resulted in the endurance characteristic improvement ∼5%.
Improved performance of multi-giga bit NAND flash using <100> channel orientation
In this paper, we report the enhanced performance of multi-giga bit NAND Flash memory through the combined effects of uniaxial compressive stress and -oriented channel engineering. Using this method, cell current increased more than 29% owing to the mobility enhancement of the narrow width (60nm) Flash cell. Reduced interface trap with the active edge of <100> channel resulted in the endurance characteristic improvement ∼5%.
Improved performance of multi-giga bit NAND flash using <100> channel orientation
Hye Jin Cho, (Autor:in) / Byung Young Choi, (Autor:in) / Hee Soo Kang, (Autor:in) / Suk-Kang Sung, (Autor:in) / Tae Hun Kim, (Autor:in) / Byung Kyu Cho, (Autor:in) / Donguk Choi, (Autor:in) / Albert Fayrushin, (Autor:in) / Jong Ho Lim, (Autor:in) / Ji-Hwon Lee, (Autor:in)
01.10.2006
585247 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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