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Lateral conduction mid-Infrared photodetectors using self-assembled Ge/Si quantum dots

Lee, S.-W. / Kim, T.G. / Hirakawa, K. / Kim, J.S. / Cho, H.Y.

We have investigated a lateral conduction midinfrared photodetectors by using photoionization of holes in the self-assembled Ge/Si quantum dots. A broad mid-infrared photocurrent spectrum was observed in photon energy range of 120–400 meV due to intersubband transition in the valence band of self-assembled Ge quantum dots. The peak responsivity was 134 mA/W at photon energy range of 240 meV at T=10 K.

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Lateral conduction mid-Infrared photodetectors using self-assembled Ge/Si quantum dots

Lee, S.-W. / Kim, T.G. / Hirakawa, K. / Kim, J.S. / Cho, H.Y.

We have investigated a lateral conduction midinfrared photodetectors by using photoionization of holes in the self-assembled Ge/Si quantum dots. A broad mid-infrared photocurrent spectrum was observed in photon energy range of 120–400 meV due to intersubband transition in the valence band of self-assembled Ge quantum dots. The peak responsivity was 134 mA/W at photon energy range of 240 meV at T=10 K.

Lateral conduction mid-Infrared photodetectors using self-assembled Ge/Si quantum dots

Lee, S.-W. / Kim, T.G. / Hirakawa, K. / Kim, J.S. / Cho, H.Y.

We have investigated a lateral conduction midinfrared photodetectors by using photoionization of holes in the self-assembled Ge/Si quantum dots. A broad mid-infrared photocurrent spectrum was observed in photon energy range of 120–400 meV due to intersubband transition in the valence band of self-assembled Ge quantum dots. The peak responsivity was 134 mA/W at photon energy range of 240 meV at T=10 K.

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Titel:

Lateral conduction mid-Infrared photodetectors using self-assembled Ge/Si quantum dots

Beteiligte:

Lee, S.-W. (Autor:in) / Kim, T.G. (Autor:in) / Hirakawa, K. (Autor:in) / Kim, J.S. (Autor:in) / Cho, H.Y. (Autor:in)

Erschienen in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 520-521

Erscheinungsdatum:

01.10.2006

Format / Umfang:

228980 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388883

Medientyp:

Aufsatz (Konferenz)

Format:

Elektronische Ressource

Sprache:

Englisch

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