Lateral conduction mid-Infrared photodetectors using self-assembled Ge/Si quantum dots: Fid-Bau Portal

Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

Lateral conduction mid-Infrared photodetectors using self-assembled Ge/Si quantum dots

Lee, S.-W. / Kim, T.G. / Hirakawa, K. / Kim, J.S. / Cho, H.Y.

We have investigated a lateral conduction midinfrared photodetectors by using photoionization of holes in the self-assembled Ge/Si quantum dots. A broad mid-infrared photocurrent spectrum was observed in photon energy range of 120–400 meV due to intersubband transition in the valence band of self-assembled Ge quantum dots. The peak responsivity was 134 mA/W at photon energy range of 240 meV at T=10 K.

Access

Check availability in my library

Order at Subito €

Page navigation

Document information

Export, share and cite

Lateral conduction mid-Infrared photodetectors using self-assembled Ge/Si quantum dots

Lee, S.-W. / Kim, T.G. / Hirakawa, K. / Kim, J.S. / Cho, H.Y.

We have investigated a lateral conduction midinfrared photodetectors by using photoionization of holes in the self-assembled Ge/Si quantum dots. A broad mid-infrared photocurrent spectrum was observed in photon energy range of 120–400 meV due to intersubband transition in the valence band of self-assembled Ge quantum dots. The peak responsivity was 134 mA/W at photon energy range of 240 meV at T=10 K.

Lateral conduction mid-Infrared photodetectors using self-assembled Ge/Si quantum dots

Lee, S.-W. / Kim, T.G. / Hirakawa, K. / Kim, J.S. / Cho, H.Y.

We have investigated a lateral conduction midinfrared photodetectors by using photoionization of holes in the self-assembled Ge/Si quantum dots. A broad mid-infrared photocurrent spectrum was observed in photon energy range of 120–400 meV due to intersubband transition in the valence band of self-assembled Ge quantum dots. The peak responsivity was 134 mA/W at photon energy range of 240 meV at T=10 K.

Access

Check availability in my library

Order at Subito €

Page navigation

Document information

Export, share and cite

Document information

Title:

Lateral conduction mid-Infrared photodetectors using self-assembled Ge/Si quantum dots

Contributors:

Lee, S.-W. (author) / Kim, T.G. (author) / Hirakawa, K. (author) / Kim, J.S. (author) / Cho, H.Y. (author)

Published in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 520-521

Publication date:

2006-10-01

Size:

228980 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388883

Type of media:

Conference paper

Type of material:

Electronic Resource

Language:

English

Similar titles

Solar Cells, Photodetectors, and Optical Sources from Infrared Colloidal Quantum Dots

Sargent, E. H. | British Library Online Contents | 2008

Aspects of Ge/Si self-assembled quantum dots

Boucaud, P. / Le Thanh, V. / Yam, V. et al. | British Library Online Contents | 2002

Infrared Photodetectors Based on CVD-Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity

Sun, Z. / Liu, Z. / Li, J. et al. | British Library Online Contents | 2012

Stacked layers of InAs self-assembled quantum dots

Khorenko, V. / Malzer, S. / Plagwitz, H. et al. | British Library Online Contents | 2002

Electronic structure of InAs self-assembled quantum dots

Schmidt, K. H. / Bock, C. / Kunze, U. et al. | British Library Online Contents | 2002