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Scaling studies of coaxially gated carbon nanotube MOSFETs
The scaling issues for carbon nanotube field-effect transistors with doped nanotubes as source/drain extensions are studied by solving the two-dimensional Poisson equation selfconsistently with non-equilibrium Green’s function formalism.
Scaling studies of coaxially gated carbon nanotube MOSFETs
The scaling issues for carbon nanotube field-effect transistors with doped nanotubes as source/drain extensions are studied by solving the two-dimensional Poisson equation selfconsistently with non-equilibrium Green’s function formalism.
Scaling studies of coaxially gated carbon nanotube MOSFETs
Chiyui Ahn, (Autor:in) / Mincheol Shin, (Autor:in)
01.10.2006
269353 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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