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    Scaling studies of coaxially gated carbon nanotube MOSFETs

    New search for: Chiyui Ahn,
    New search for: Mincheol Shin,

    The scaling issues for carbon nanotube field-effect transistors with doped nanotubes as source/drain extensions are studied by solving the two-dimensional Poisson equation selfconsistently with non-equilibrium Green’s function formalism.

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    Scaling studies of coaxially gated carbon nanotube MOSFETs

    New search for: Chiyui Ahn,
    New search for: Mincheol Shin,

    The scaling issues for carbon nanotube field-effect transistors with doped nanotubes as source/drain extensions are studied by solving the two-dimensional Poisson equation selfconsistently with non-equilibrium Green’s function formalism.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Scaling studies of coaxially gated carbon nanotube MOSFETs

    New search for: Chiyui Ahn,
    New search for: Mincheol Shin,

    The scaling issues for carbon nanotube field-effect transistors with doped nanotubes as source/drain extensions are studied by solving the two-dimensional Poisson equation selfconsistently with non-equilibrium Green’s function formalism.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Scaling studies of coaxially gated carbon nanotube MOSFETs

    Contributors:

    Chiyui Ahn, (author) / Mincheol Shin, (author)

    Published in:

    2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 548-549

    Publication date:

    2006-10-01

    Size:

    269353 byte

    ISBN:

    978-1-4244-0541-1 , 978-1-4244-0540-4

    DOI:

    https://doi.org/10.1109/NMDC.2006.4388896

    Type of media:

    Conference paper

    Type of material:

    Electronic Resource

    Language:

    English

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