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Low-temperature grown GaAs tunnel junctions
A GaAs tunnel junction is formed by molecular beam epitaxy at low substrate temperatures to incorporate excess arsenic, followed by an anneal to precipitate the excess arsenic. This tunnel junction is comparable in resistance and peak current density to tunnel junctions grown stoichiometrically. Owing to the inhomogeneity in this two-phase tunnel junction, there is only a slight indication of a current peak. This lack of a valley in the tunnelling characteristic results in a low voltage drop even for currents in excess of the peak current.
Low-temperature grown GaAs tunnel junctions
A GaAs tunnel junction is formed by molecular beam epitaxy at low substrate temperatures to incorporate excess arsenic, followed by an anneal to precipitate the excess arsenic. This tunnel junction is comparable in resistance and peak current density to tunnel junctions grown stoichiometrically. Owing to the inhomogeneity in this two-phase tunnel junction, there is only a slight indication of a current peak. This lack of a valley in the tunnelling characteristic results in a low voltage drop even for currents in excess of the peak current.
Low-temperature grown GaAs tunnel junctions
Ahmed, S. (Autor:in) / Melloch, M.R. (Autor:in) / McInturff, D.T. (Autor:in) / Woodall, J.M. (Autor:in) / Harmon, E.S. (Autor:in)
28.08.1997
3 pages
Aufsatz (Zeitschrift)
Englisch
gallium arsenide , peak current density , resistance , excess As , tunnelling characteristic , molecular beam epitaxial growth , molecular beam epitaxy , low voltage drop , III-V semiconductors , tunnelling , current density , two-phase tunnel junction , anneal , GaAs tunnel junctions , low substrate temperatures , semiconductor growth , low-temperature grown junctions , GaAs , p-n junctions , MBE
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