Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High Temperature Electronics
The fabrication of a silicon carbide (SiC) junction field effect transistor (J-FET) was shown practicable. Several amplifier designs were breadboarded with silicon devices to study the required parameters. A simplified building block amplifier was constructed and tested. (Author)
High Temperature Electronics
The fabrication of a silicon carbide (SiC) junction field effect transistor (J-FET) was shown practicable. Several amplifier designs were breadboarded with silicon devices to study the required parameters. A simplified building block amplifier was constructed and tested. (Author)
High Temperature Electronics
R. B. Campbell (Autor:in) / H. S. Berman (Autor:in) / W. D. Loftus (Autor:in) / C. E. Hardies (Autor:in)
1971
79 pages
Report
Keine Angabe
Englisch
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