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High Temperature Electronics

R. B. Campbell / H. S. Berman / W. D. Loftus / C. E. Hardies

The fabrication of a silicon carbide (SiC) junction field effect transistor (J-FET) was shown practicable. Several amplifier designs were breadboarded with silicon devices to study the required parameters. A simplified building block amplifier was constructed and tested. (Author)

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High Temperature Electronics

R. B. Campbell / H. S. Berman / W. D. Loftus / C. E. Hardies

The fabrication of a silicon carbide (SiC) junction field effect transistor (J-FET) was shown practicable. Several amplifier designs were breadboarded with silicon devices to study the required parameters. A simplified building block amplifier was constructed and tested. (Author)

High Temperature Electronics

R. B. Campbell / H. S. Berman / W. D. Loftus / C. E. Hardies

The fabrication of a silicon carbide (SiC) junction field effect transistor (J-FET) was shown practicable. Several amplifier designs were breadboarded with silicon devices to study the required parameters. A simplified building block amplifier was constructed and tested. (Author)

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Title:

High Temperature Electronics

Contributors:

R. B. Campbell (author) / H. S. Berman (author) / W. D. Loftus (author) / C. E. Hardies (author)

Publication date:

1971

Size:

79 pages

Type of media:

Report

Type of material:

No indication

Language:

English

Keywords:

Circuits , Resistive, Capacitive, & Inductive Components , Transistor amplifiers , Field effect transistors , High-temperature research , Silicon carbides , Aircraft equipment , Manufacturing methods , Resistors , Diffusion

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