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Strain Characterization of Epitaxially-Grown Superlattices by Raman Spectroscopy
Abstract A complete set of phonon deformation potentials, obtained through control piezo-Raman measurements, is used to analyze published data of undercritical ZnS/ZnTe, ZnS/ZnSe, and InSb/InAlSb superlat- tices (SLs). Firstly, published Raman spectra from free-standing ZnS/ZnA (A=Te, Se) SLs, with variable relative thickness are analyzed. For under- critical thickness, the frequency shifts vary linearly with the bisotropic strain ε‖, as calculated by is the lattice mismatch, the G are shear moduli, and p is the relative thickness: p =(ZnS thickness)/(SL period). Secondly, published Raman data for undercritical InSb/In1- x AlxSb super-lattices, grown on InSb(100), are analyzed in terms of varying composition x. The longitudinal optical phonon frequency of the InSb layers changes linearly with x, though it is expected to be lattice-matched to the substrate. The calculated compressive stress of the InSb layers was found to be one-sixth of that expected for InSb layers lattice matched to free-standing In1- x AlxSb layers. This stress is attributed to misfit dislocations found in similar heterostructures.
Strain Characterization of Epitaxially-Grown Superlattices by Raman Spectroscopy
Abstract A complete set of phonon deformation potentials, obtained through control piezo-Raman measurements, is used to analyze published data of undercritical ZnS/ZnTe, ZnS/ZnSe, and InSb/InAlSb superlat- tices (SLs). Firstly, published Raman spectra from free-standing ZnS/ZnA (A=Te, Se) SLs, with variable relative thickness are analyzed. For under- critical thickness, the frequency shifts vary linearly with the bisotropic strain ε‖, as calculated by is the lattice mismatch, the G are shear moduli, and p is the relative thickness: p =(ZnS thickness)/(SL period). Secondly, published Raman data for undercritical InSb/In1- x AlxSb super-lattices, grown on InSb(100), are analyzed in terms of varying composition x. The longitudinal optical phonon frequency of the InSb layers changes linearly with x, though it is expected to be lattice-matched to the substrate. The calculated compressive stress of the InSb layers was found to be one-sixth of that expected for InSb layers lattice matched to free-standing In1- x AlxSb layers. This stress is attributed to misfit dislocations found in similar heterostructures.
Strain Characterization of Epitaxially-Grown Superlattices by Raman Spectroscopy
Siakavellas, M. (Autor:in) / Kontos, A. G. (Autor:in) / Raptis, Y. S. (Autor:in)
01.01.2002
7 pages
Aufsatz/Kapitel (Buch)
Elektronische Ressource
Englisch
Frequency Shift , Misfit Dislocation , Alloy Layer , Strain Characterization , Raman Experiment Physics , Physics, general , Electronics and Microelectronics, Instrumentation , Surfaces and Interfaces, Thin Films , Characterization and Evaluation of Materials , Physical Chemistry , Condensed Matter Physics
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