Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Fractional Quantum Hall Effect: Introduction
Abstract The FQHE was realized in high-mobility 2DEG in GaAs/Al x Ga1-x As heterostructures [4.1–6] and in high-mobility Si-MOSFETs [4.7]. It is characterized by the fact that the Hall conductance has plateaus quantized to certain simple fractions v of the unit e 2 / h and at the same places, the longitudinal resistivity shows an almost dissipationless current flow.
Fractional Quantum Hall Effect: Introduction
Abstract The FQHE was realized in high-mobility 2DEG in GaAs/Al x Ga1-x As heterostructures [4.1–6] and in high-mobility Si-MOSFETs [4.7]. It is characterized by the fact that the Hall conductance has plateaus quantized to certain simple fractions v of the unit e 2 / h and at the same places, the longitudinal resistivity shows an almost dissipationless current flow.
Fractional Quantum Hall Effect: Introduction
Professor Chakraborty, Tapash (Autor:in) / Dr. Pietiläinen, Pekka (Autor:in)
Second Enlarged and Updated Edition
01.01.1995
7 pages
Aufsatz/Kapitel (Buch)
Elektronische Ressource
Englisch
Theory of the Fractional Quantum Hall Effect
| Springer Verlag | 1988
Numerical Investigation of the Fractional Quantum Hall Effect
| Springer Verlag | 1988
The Quantum Hall Effects : Integral and Fractional
| TIBKAT | 1995
Thermopower of composite fermions in the fractional quantum Hall effect regime
| British Library Online Contents | 2003
Excitations in the Fractional Quantum Hall Effect at ν=1/2: Layered Electron Systems
| Springer Verlag | 1988