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Fractional Quantum Hall Effect: Introduction
Abstract The FQHE was realized in high-mobility 2DEG in GaAs/Al x Ga1-x As heterostructures [4.1–6] and in high-mobility Si-MOSFETs [4.7]. It is characterized by the fact that the Hall conductance has plateaus quantized to certain simple fractions v of the unit e 2 / h and at the same places, the longitudinal resistivity shows an almost dissipationless current flow.
Fractional Quantum Hall Effect: Introduction
Abstract The FQHE was realized in high-mobility 2DEG in GaAs/Al x Ga1-x As heterostructures [4.1–6] and in high-mobility Si-MOSFETs [4.7]. It is characterized by the fact that the Hall conductance has plateaus quantized to certain simple fractions v of the unit e 2 / h and at the same places, the longitudinal resistivity shows an almost dissipationless current flow.
Fractional Quantum Hall Effect: Introduction
Professor Chakraborty, Tapash (author) / Dr. Pietiläinen, Pekka (author)
Second Enlarged and Updated Edition
1995-01-01
7 pages
Article/Chapter (Book)
Electronic Resource
English
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